NCV57001DWR2G

Manufacturer: onsemi

Description

IC IGBT GATE DRIVER

Technical Parameters

Parameter Value
Product Status Active
Technology Capacitive Coupling
Number of Channels 1
Voltage - Isolation 1200Vrms
Common Mode Transient Immunity (Min) 100kV/μs
Propagation Delay tpLH / tpHL (Max) 90ns, 90ns
Pulse Width Distortion (Max) -
Rise / Fall Time (Typ) 10ns, 15ns
Current - Output High, Low 7.8A, 7.1A
Current - Peak Output -
Voltage - Forward (Vf) (Typ) -
Current - DC Forward (If) (Max) -
Voltage - Output Supply 0V ~ 24V
Operating Temperature -40°C ~ 125°C (TA)
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOIC
Approval Agency UL, VDE

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