NTJD5121NT1G

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET 2N-CH 60V 295MA SOT363

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 295mA
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 20V
Power - Max 250mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363

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