EM6K34T2CR

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

MOSFET 2N-CH 50V 0.2A EMT6

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate, 0.9V Drive
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 200mA
Rds On (Max) @ Id, Vgs 2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 800mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 10V
Power - Max 120mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6

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