EFC4601-M-TR

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

N-CHANNEL SILICON MOSFET FOR GEN

Technical Parameters

Parameter Value
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 24V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Rds On (Max) @ Id, Vgs 44mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 10V
Power - Max 1.6W (Ta)
Operating Temperature 150°C
Mounting Type Surface Mount
Package / Case 4-UFBGA, FCBGA
Supplier Device Package EFCP1818-4CA-055

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