NCV57085DR2G

Manufacturer: onsemi

Description

ISOLATED COMPACT IGBT GATE DRIVE

Technical Parameters

Parameter Value
Product Status Active
Technology Capacitive Coupling
Number of Channels 1
Voltage - Isolation 2500Vrms
Common Mode Transient Immunity (Min) 100kV/μs
Propagation Delay tpLH / tpHL (Max) 90ns, 90ns
Pulse Width Distortion (Max) 30ns
Rise / Fall Time (Typ) 10ns, 15ns
Current - Output High, Low 7.5A, 7A, 7.5A, 7A
Current - Peak Output 7.5A, 7A
Voltage - Forward (Vf) (Typ) -
Current - DC Forward (If) (Max) -
Voltage - Output Supply 0V ~ 30V
Operating Temperature -40°C ~ 125°C
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Approval Agency UL, VDE

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