RGT40NS65DGTL
Manufacturer:
ROHM Semiconductor
Category:
Single IGBTs
Description
IGBT TRENCH FIELD 650V 40A LPDS
$2.71
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Not For New Designs |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 20A |
| Power - Max | 161 W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 40 nC |
| Td (on/off) @ 25°C | 22ns/75ns |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 58 ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | LPDS |