RGT50NS65DGTL
Manufacturer:
ROHM Semiconductor
Category:
Single IGBTs
Description
IGBT TRENCH FIELD 650V 48A LPDS
$3.44
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 48 A |
| Current - Collector Pulsed (Icm) | 75 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 25A |
| Power - Max | 194 W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 49 nC |
| Td (on/off) @ 25°C | 27ns/88ns |
| Test Condition | 400V, 25A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 58 ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | LPDS |