RGT30NS65DGC9
Manufacturer:
ROHM Semiconductor
Category:
Single IGBTs
Description
IGBT TRENCH FIELD 650V 30A TO262
$2.90
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Pulsed (Icm) | 45 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 15A |
| Power - Max | 133 W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 32 nC |
| Td (on/off) @ 25°C | 18ns/64ns |
| Test Condition | 400V, 15A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 55 ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Supplier Device Package | TO-262 |