HGTD1N120BNS9A

Manufacturer: onsemi
Category: Single IGBTs

Description

IGBT 1200V 5.3A 60W TO252AA

Technical Parameters

Parameter Value
Product Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 5.3 A
Current - Collector Pulsed (Icm) 6 A
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 1A
Power - Max 60 W
Switching Energy 70μJ (on), 90μJ (off)
Input Type Standard
Gate Charge 14 nC
Td (on/off) @ 25°C 15ns/67ns
Test Condition 960V, 1A, 82Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252AA

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