RGTV60TK65DGVC11

Manufacturer: ROHM Semiconductor
Category: Single IGBTs

Description

IGBT TRNCH FIELD 650V 33A TO3PFM

Technical Parameters

Parameter Value
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 33 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Power - Max 76 W
Switching Energy 570μJ (on), 500μJ (off)
Input Type Standard
Gate Charge 64 nC
Td (on/off) @ 25°C 33ns/105ns
Test Condition 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 95 ns
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3PFM, SC-93-3
Supplier Device Package TO-3PFM

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