NGD18N45CLBT4G
Manufacturer:
onsemi
Category:
Single IGBTs
Description
INSULATED GATE BIPOLAR TRANSISTO
$0.00
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Obsolete |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 500 V |
| Current - Collector (Ic) (Max) | 18 A |
| Current - Collector Pulsed (Icm) | 50 A |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 4.5V, 7A |
| Power - Max | 115 W |
| Switching Energy | - |
| Input Type | Logic |
| Gate Charge | - |
| Td (on/off) @ 25°C | 420ns/2.9μs |
| Test Condition | 300V, 1kOhm, 5V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252, (D-Pak) |