FAM65HR51DS2

Manufacturer: onsemi
Category: IGBT Modules

Description

IGBT MODULE 650V 33A 135W

Technical Parameters

Parameter Value
Product Status Active
IGBT Type -
Configuration Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 33 A
Power - Max 135 W
Vce(on) (Max) @ Vge, Ic -
Current - Collector Cutoff (Max) -
Input Capacitance (Cies) @ Vce 4.86 nF @ 400 V
Input Standard
NTC Thermistor No
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case -
Supplier Device Package -

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