QS8K11TCR
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
4V DRIVE NCH+NCH MOSFET
$0.92
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | - |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 3.3nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 10V |
| Power - Max | 1.5W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | TSMT8 |