CSD87503Q3ET

Manufacturer: Texas Instruments
Category: FET, MOSFET Arrays

Description

30-V DUAL N-CHANNEL MOSFET, COMM

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Common Source
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 2.1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 15V
Power - Max 15.6W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package 8-VSON (3.3x3.3)

Industry News