CSD86350Q5DT

Manufacturer: Texas Instruments
Category: FET, MOSFET Arrays

Description

25V POWERBLOCK N CH MOSFET

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Rds On (Max) @ Id, Vgs 5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.1V @ 250μA, 1.6V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 10.7nC @ 4.5V, 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1870pF @ 12.5V, 4000pF @ 12.5V
Power - Max 13W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerLDFN
Supplier Device Package 8-LSON (5x6)

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