EM6M1T2R
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
MOSFET N/P-CH 30V/20V EMT6
$0.53
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Not For New Designs |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V, 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA, 200mA |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 10mA, 4V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 0.9nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 13pF @ 5V |
| Power - Max | 150mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |