EM6K1T2R
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
MOSFET 2N-CH 30V .1A EMT6
$0.48
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Not For New Designs |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 10mA, 4V |
| Vgs(th) (Max) @ Id | 1.5V @ 100μA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 13pF @ 5V |
| Power - Max | 150mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |