EFC6605R-V-TR

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET N-CH DUAL 10A 24V 6XFLGA

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel
FET Feature Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Rds On (Max) @ Id, Vgs 13.3mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 19.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.6W (Ta)
Operating Temperature 150°C
Mounting Type Surface Mount
Package / Case 6-SMD, No Lead
Supplier Device Package 6-EFCP (1.9x1.46)

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