NTGD4167CT1G
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Description
MOSFET N/P-CH 30V 2.6/1.9A 6TSOP
$0.67
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A, 1.9A |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.6A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 295pF @ 15V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-TSOP |