SH8K25GZ0TB1

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

40V NCH+NCH POWER MOSFET : A POW

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 5.2A (Ta)
Rds On (Max) @ Id, Vgs 85mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 10V
Power - Max 1.4W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP

Industry News