NTMFD2D4N03P8

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET 2N-CH 30V 8PQFN

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Asymmetrical
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs 5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V, 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1715pF @ 15V, 3825pF @ 15V
Power - Max 1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PQFN (5x6)

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