FDPC8012S

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET 2N-CH 25V 13A/26A PWR CLP

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 13A, 26A
Rds On (Max) @ Id, Vgs 7mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1075pF @ 13V
Power - Max 800mW, 900mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package Powerclip-33

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