TT8J11TCR

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

MOSFET 2P-CH 12V 3.5A TSST8

Technical Parameters

Parameter Value
Product Status Not For New Designs
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 3.5A
Rds On (Max) @ Id, Vgs 43mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 6V
Power - Max 650mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 8-TSST

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