FDC6318P

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET 2P-CH 12V 2.5A SSOT-6

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 2.5A
Rds On (Max) @ Id, Vgs 90mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 455pF @ 6V
Power - Max 700mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT?-6

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