MRFG35010NT1

Manufacturer: Freescale Semiconductor
Category: RF FETs, MOSFETs

Description

RF S BAND, GALLIUM ARSENIDE, N-C

Technical Parameters

Parameter Value
Product Status Active
Technology pHEMT FET
Configuration -
Frequency 3.55GHz
Gain 10dB
Voltage - Test 12 V
Current Rating (Amps) -
Noise Figure -
Current - Test 180 mA
Power - Output 9W
Voltage - Rated 15 V
Mounting Type -
Package / Case PLD-1.5
Supplier Device Package PLD-1.5

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