QS6M3TR
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
MOSFET N/P-CH 30V/20V 1.5A TSMT6
$0.62
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Not For New Designs |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V, 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 10V |
| Power - Max | 1.25W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | TSMT6 (SC-95) |