FDC6401N
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Description
MOSFET 2N-CH 20V 3A SSOT-6
$0.68
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 324pF @ 10V |
| Power - Max | 700mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | SuperSOT?-6 |