UM6K31NTN

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

MOSFET 2N-CH 60V 0.25A UMT6

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 250mA
Rds On (Max) @ Id, Vgs 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 15pF @ 25V
Power - Max 150mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package UMT6

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