UM6J1NTN

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

MOSFET 2P-CH 30V 0.2A UMT6

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 200mA
Rds On (Max) @ Id, Vgs 1.4Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 10V
Power - Max 150mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package UMT6

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