TT8M1TR
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
MOSFET N/P-CH 20V 2.5A TSST8
$0.56
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Not For New Designs |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 2.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 3.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 10V |
| Power - Max | 1W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | 8-TSST |