QS6K1FRATR
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
2.5V DRIVE NCH+NCH MOSFET (CORRE
$0.60
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 238mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 77pF @ 10V |
| Power - Max | 900mW (Tc) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | TSMT6 (SC-95) |