QH8MB5TCR

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

40V 4.5A/5.0A, DUAL NCH+PCH, TSM

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 5A (Ta)
Rds On (Max) @ Id, Vgs 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 10V, 17.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 20V, 920pF @ 20V
Power - Max 1.1W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package TSMT8

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