QH8MC5TCR

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

60V 3.0A/3.5A, DUAL NCH+PCH, TSM

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 10V, 17.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 135pF @ 30V, 850pF @ 30V
Power - Max 1.1W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package TSMT8

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