STS10DN3LH5
Manufacturer:
STMicroelectronics
Category:
FET, MOSFET Arrays
Description
MOSFET 2N-CH 30V 10A 8-SOIC
$1.41
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Not For New Designs |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 25V |
| Power - Max | 2.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |