QS8M51TR
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
MOSFET N/P-CH 100V 2A/1.5A TSMT8
$1.43
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 2A, 1.5A |
| Rds On (Max) @ Id, Vgs | 325mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 25V |
| Power - Max | 1.5W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | TSMT8 |