SH8MB5TB1

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

40V DUAL NCH+PCH, SOP8, POWER MO

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta)
Rds On (Max) @ Id, Vgs 19.4mOhm @ 8.5A, 10V, 16.8mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 10.6nC @ 20V, 51nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 20V, 2870pF @ 20V
Power - Max 2W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP

Industry News