SH8K39GZETB

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

4V DRIVE NCH+NCH MOSFET. SH8K39

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Rds On (Max) @ Id, Vgs 21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.7V @ 200μA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 30V
Power - Max 1.4W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP

Industry News