US6J11TR
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
MOSFET 2P-CH 12V 1.3A TUMT6
$0.67
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 1.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 6V |
| Power - Max | 320mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Supplier Device Package | TUMT6 |