CSD85301Q2

Manufacturer: Texas Instruments
Category: FET, MOSFET Arrays

Description

MOSFET 2N-CH 20V 5A 6WSON

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5A
Rds On (Max) @ Id, Vgs 27mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 469pF @ 10V
Power - Max 2.3W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Supplier Device Package 6-WSON (2x2)

Industry News