QS6J11TR
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
MOSFET 2P-CH 12V 2A TSMT6
$0.63
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 770pF @ 6V |
| Power - Max | 600mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | TSMT6 (SC-95) |