HS8K1TB
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
30V NCH+NCH POWER MOSFET
$0.88
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V, 7.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 348pF @ 15V, 429pF @ 15V |
| Power - Max | 2W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-UDFN Exposed Pad |
| Supplier Device Package | HSML3030L10 |