UT6MA3TCR

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

20V NCH+PCH MIDDLE POWER MOSFET

Technical Parameters

Parameter Value
Product Status Active
Technology -
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5A, 5.5A
Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 10V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-PowerUDFN
Supplier Device Package HUML2020L8

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