QH8MA4TCR

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

MOSFET N/P-CH 30V TSMT8

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9A, 8A
Rds On (Max) @ Id, Vgs 16mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 15V
Power - Max 1.5W
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package TSMT8

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