SH8MA3TB1

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

SH8MA3TB1 IS LOW ON-RESISTANCE A

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 7A (Ta), 6A (Ta)
Rds On (Max) @ Id, Vgs 28mOhm @ 7A, 10V, 50mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V, 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 15V, 480pF @ 15V
Power - Max 2W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP

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