UT6K30TCR

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

UT6K30 IS LOW ON - RESISTANCE AN

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Rds On (Max) @ Id, Vgs 153mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.7V @ 50μA
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 30V
Power - Max 2W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-PowerUDFN
Supplier Device Package HUML2020L8

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