HP8K22TB

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

30V NCH+NCH MID POWER MOSFET

Technical Parameters

Parameter Value
Product Status Active
Technology -
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 27A, 57A
Rds On (Max) @ Id, Vgs 4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 15V
Power - Max 25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-HSOP

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