HP8K24TB

Manufacturer: ROHM Semiconductor
Category: FET, MOSFET Arrays

Description

HP8K24 IS THE HIGH RELIABILITY T

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Asymmetrical
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V, 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 15V, 2410pF @ 15V
Power - Max 3W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-HSOP

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