SH8K32GZETB
Manufacturer:
ROHM Semiconductor
Category:
FET, MOSFET Arrays
Description
4V DRIVE NCH+NCH MOSFET. COMPLEX
$1.57
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Not For New Designs |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 10V |
| Power - Max | 1.4W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |