NDS9952A-F011

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

MOSFET N/P-CH 30V

Technical Parameters

Parameter Value
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.9A
Rds On (Max) @ Id, Vgs 80mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V, 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 320pF @ 10V
Power - Max 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC

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