NXH010P90MNF1PG

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

PIM F1 SIC HALFBRIDGE 900V 10MOH

Technical Parameters

Parameter Value
Product Status Active
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Dual) Common Source
FET Feature -
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 154A (Tc)
Rds On (Max) @ Id, Vgs 14mOhm @ 100A, 15V
Vgs(th) (Max) @ Id 4.3V @ 40mA
Gate Charge (Qg) (Max) @ Vgs 546.4nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 7007pF @ 450V
Power - Max 328W (Tj)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -

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